NEMS ATOMIC SWITCH BASED ON RESISTANCE VARIATION

摘要

The present invention relates to a NEMS atomic switch using a resistance variation switching material. The NEMS atomic switch includes: a base board; a first electrode which is formed on the base board; a resistance variation layer which is formed on the first electrode by being formed with the resistance variation switching material; a second electrode which is formed by being separated from the resistance variation layer at a predetermined distance; a support which is formed on the base board and supports the second electrode so that the second electrode keeps a distance from the resistance variation layer at the predetermined distance by being connected with an end part of the second electrode; and an auxiliary electrode which is formed to be separated from both lateral sides of the second electrode at a predetermined distance. The present invention maintains a switch-on state as the second electrode moves an air layer in a vertical direction by an electrostatic force or maintains a switch-off state as the second electrode returns to an original position by a mechanical restoration force by forming the air layer between the resistance variation layer and the second electrode. The switch device also switches off smoothly as the second electrode moves in a horizontal direction by an electrostatic force between the second electrode and the auxiliary electrode by forming the air layer between the second electrode and the auxiliary electrode.