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发明名称
中介层用基板及其制造方法
摘要
[课题]提供有用于半导体装置的高放热化、高速对应化(良高频特性化),半导体晶片等之装载容易,而且可强固接合在配线基板或半导体晶片之中介层用基板及其制造方法。[解决手段]在板状的单晶矽母材(1A)上,以化学蒸镀法或物理蒸镀法形成由氧化铝、钻石、氮化铝或氮化矽所成之绝缘层(4),接着,将上述单晶矽母材(1A)形成为单晶矽基板(1),获得在单晶矽基板(1)上具有热传导性的绝缘层(4)的中介层用基板(10)。
申请公布号
TW201442168
申请公布日期
2014.11.01
申请号
TW102144810
申请日期
2013.12.06
申请人
信越化学工业股份有限公司
发明人
茂木弘;久保田芳宏
分类号
H01L23/34(2006.01);H01L21/50(2006.01)
主分类号
H01L23/34(2006.01)
代理机构
代理人
<name>林志刚</name>
主权项
地址
日本
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