发明名称 DEVICES AND METHODS TO PROGRAM A MEMORY CELL
摘要 Subject matter disclosed herein relates to memory devices and, more particularly, to programming a memory cell.
申请公布号 US2014321201(A1) 申请公布日期 2014.10.30
申请号 US201414325075 申请日期 2014.07.07
申请人 MICRON TECHNOLOGY, INC. 发明人 Di Vincenzo Umberto;Lisi Carlo
分类号 G11C13/00 主分类号 G11C13/00
代理机构 代理人
主权项 1. A method of programming a first memory cell and a second memory cell, each of the first memory cell and the second memory cell having at least a first stable state and a second stable state, the method comprising: applying a decreasing current programming signal to the first memory cell for programming the first memory cell to one of the first and second stable states of the first memory cell; applying a decreasing voltage programming signal to the second memory cell for programming the second memory cell to one of the first and second stable states of the second memory cell; and detecting whether the decreasing current programming signal is less than a current threshold value or whether the decreasing voltage programming signal is less than a voltage threshold value.
地址 Boise ID US