发明名称 |
DEVICES AND METHODS TO PROGRAM A MEMORY CELL |
摘要 |
Subject matter disclosed herein relates to memory devices and, more particularly, to programming a memory cell. |
申请公布号 |
US2014321201(A1) |
申请公布日期 |
2014.10.30 |
申请号 |
US201414325075 |
申请日期 |
2014.07.07 |
申请人 |
MICRON TECHNOLOGY, INC. |
发明人 |
Di Vincenzo Umberto;Lisi Carlo |
分类号 |
G11C13/00 |
主分类号 |
G11C13/00 |
代理机构 |
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代理人 |
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主权项 |
1. A method of programming a first memory cell and a second memory cell, each of the first memory cell and the second memory cell having at least a first stable state and a second stable state, the method comprising:
applying a decreasing current programming signal to the first memory cell for programming the first memory cell to one of the first and second stable states of the first memory cell; applying a decreasing voltage programming signal to the second memory cell for programming the second memory cell to one of the first and second stable states of the second memory cell; and detecting whether the decreasing current programming signal is less than a current threshold value or whether the decreasing voltage programming signal is less than a voltage threshold value. |
地址 |
Boise ID US |