| 摘要 |
PROBLEM TO BE SOLVED: To provide a silicon carbide device that improves breakdown behavior and long-term reliability, and to provide a method of forming the silicon carbide device.SOLUTION: A silicon carbide device 100 includes a silicon carbide substrate 110, an inorganic passivation layer structure 120, and a molding material layer 130. The inorganic passivation layer structure 120 laterally covers at least partly a main surface of the silicon carbide substrate 110, and the molding material layer 130 is disposed adjacent to the inorganic passivation layer structure 120. By using the inorganic passivation structure for protecting the silicon carbide surface, an electric field can be sufficiently reduced for a direct contact with the molding material layer, and a contact of the silicon carbide surface with a moisture-gathering material can be avoided. |
