METHOD AND SYSTEM FOR A PSEUDO-DIFFERENTIAL LOW-NOISE AMPLIFIER AT KU-BAND

摘要

Methods and systems for a pseudo-differential low-noise amplifier at Ku-band may comprise a low-noise amplifier (LNA) integrated on a semiconductor die, where the LNA comprises differential pair transistors with an embedded inductor tail integrated on the semiconductor die. The embedded inductor tail may comprise: a first inductor with a first terminal capacitively-coupled to a gate terminal of a first transistor of the differential pair transistors and a second terminal of the first inductor coupled to second, third, and fourth inductors. The second inductor may be coupled to a source terminal of the first transistor of the differential pair transistors, the fourth inductor may be coupled to a source terminal of the second transistor of the differential pair transistors, and the third inductor may be capacitively-coupled to a gate terminal of the second transistor of the differential pair transistors and also to ground. The second inductor may be embedded within the first inductor.

主权项

1. A semiconductor device, the device comprising:
a low-noise amplifier (LNA) integrated on a semiconductor die, the LNA comprising differential pair transistors with an embedded inductor tail integrated on the semiconductor die, wherein the embedded inductor tail comprises:
a first inductor with a first terminal capacitively-coupled to a gate terminal of a first transistor of the differential pair transistors and a second terminal of the first inductor coupled to second, third, and fourth inductors, wherein the second inductor is coupled to a source terminal of the first transistor of the differential pair transistors, the fourth inductor is coupled to a source terminal of the second transistor of the differential pair transistors, and the third inductor is capacitively-coupled to a gate terminal of the second transistor of the differential pair transistors and also to ground.