发明名称 Positive resist composition and method of pattern formation with the same
摘要 A positive resist composition comprising: (A) a resin which comes to have an enhanced solubility in an alkaline developing solution by an action of an acid; (B) a compound which generates an acid upon irradiation with actinic rays or a radiation; (C) a fluorine-containing compound containing at least one group selected from the groups (x) to (z); and (F) a solvent, and a method of pattern formation with the composition: (x) an alkali-soluble group; (y) a group which decomposes by an action of an alkaline developing solution to enhance a solubility in an alkaline developing solution; and (z) a group which decomposes by an action of an acid.
申请公布号 US8871421(B2) 申请公布日期 2014.10.28
申请号 US200611492123 申请日期 2006.07.25
申请人 FUJIFILM Corporation 发明人 Kanda Hiromi;Kanna Schinichi;Inabe Haruki
分类号 G03F7/004;G03F7/028 主分类号 G03F7/004
代理机构 Sughrue Mion, PLLC 代理人 Sughrue Mion, PLLC
主权项 1. A positive resist composition comprising: (A) a resin which comes to have an enhanced solubility in an alkaline developing solution by an action of an acid, wherein the resin (A) has no fluorine atom, wherein the resin (A) does not have an aromatic group; (B) a compound which generates an acid upon irradiation with actinic rays or a radiation; (C) a fluorine-containing compound, wherein the fluorine-containing compound (C) is a resin, containing at least one group selected from the groups (x) to (z): (x) an alkali-soluble group;(y) a group which decomposes by an action of an alkaline developing solution to enhance a solubility in an alkaline developing solution; and(z) a group which decomposes by an action of an acid; and (F) a solvent, wherein: the amount of the fluorine-containing compound (C) added is from 0.1 to 30% by mass based on all solid components of the positive resist composition; the fluorine-containing compound (C) has a structure represented by formula (F3) and the compound (C) is a compound containing a branched alkyl group substituted by at least one fluorine atom: wherein R62 and R63 each independently represents a fluoroalkyl group, provided that R62 and R63 may be bonded to each other to form a ring; and R64 represents a hydrogen atom, a fluorine atom or an alkyl group; and the amount of the resin (A) added to the positive resist composition is 50 to 99.7% by mass based on all solid components of the positive resist composition.
地址 Tokyo JP