Methods of reducing material loss in isolation structures by introducing inert atoms into oxide hard mask layer used in growing channel semiconductor material

摘要

In one example, the method includes forming a plurality of isolation structures in a semiconducting substrate that define first and second active regions where first and second transistor devices, respectively, will be formed, forming a hard mask layer on a surface of the substrate above the first and second active regions, wherein the hard mask layer comprises at least one of carbon, fluorine, xenon or germanium ions, performing a first etching process to remove a portion of the hard mask layer and expose a surface of one of the first and second active regions, after performing the first etching process, forming a channel semiconductor material on the surface of the active region that was exposed by the first etching process, and after forming the channel semiconductor material, performing a second etching process to remove remaining portions of the hard mask layer that were not removed during the first etching process.

主权项

1. A method, comprising:
forming a plurality of isolation structures comprised of silicon dioxide in a semiconducting substrate, said isolation structures defining first and second active regions where first and second transistor devices, respectively, will be formed; forming a hard mask layer on a surface of said substrate above said first and second active regions and above at least one isolation structures, said hard mask layer comprising at least one of carbon, fluorine, xenon or germanium ions such that the hard mask layer exhibits an etch rate that is greater than said silicon dioxide when exposed to an etch process designed to remove a portion of said silicon dioxide; performing a first etching process to remove a portion of said hard mask layer and to thereby expose a surface of one of said first and second active regions; after performing said first etching process, forming a channel semiconductor material on said surface of said active region that was exposed by performing said first etching process; and after forming said channel semiconductor material, performing a second etching process to remove remaining portions of said hard mask layer that were not removed during said first etching process.