Semiconductor device and related manufacturing method

摘要

A semiconductor device manufacturing method includes providing a mask on a semiconductor member. The method further includes providing a dummy element to cover a portion of the mask that overlaps a first portion of the semiconductor member and to cover a second portion of the semiconductor member. The method further includes removing a third portion of the semiconductor member, which has not been covered by the mask or the dummy element. The method further includes providing a silicon compound that contacts the first portion of the semiconductor member. The method further includes removing the dummy element to expose and to remove the second portion of the semiconductor member. The method further includes forming a gate structure that overlaps the first portion of the semiconductor member. The first portion of the semiconductor member is used as a channel region and is supported by the silicon compound.

主权项

1. A method for manufacturing a semiconductor device, the method comprising:
providing a mask on a semiconductor member; providing a dummy element to cover a portion of the mask, the portion of the mask overlapping a first portion of the semiconductor member, the dummy element further covering a second portion of the semiconductor member, the second portion of the semiconductor member being adjacent to the first portion of the semiconductor member; removing a third portion of the semiconductor member, the third portion of the semiconductor having not been covered by the mask or the dummy element; epitaxially growing a silicon compound on at least a surface of the first portion of the semiconductor member; removing the dummy element to expose the portion of the mask and to expose the second portion of the semiconductor member; removing the second portion of the semiconductor member; and forming a gate structure that overlaps the first portion of the semiconductor member.