| 发明名称 |
Composite of III-nitride crystal on laterally stacked substrates |
| 摘要 |
Group-III nitride crystal composites made up of especially processed crystal slices, cut from III-nitride bulk crystal, whose major surfaces are of {1-10±2}, {11-2±2}, {20-2±1} or {22-4±1} orientation, disposed adjoining each other sideways with the major-surface side of each slice facing up, and III-nitride crystal epitaxially present on the major surfaces of the adjoining slices, with the III-nitride crystal containing, as principal impurities, either silicon atoms or oxygen atoms. |
| 申请公布号 |
US8872309(B2) |
申请公布日期 |
2014.10.28 |
| 申请号 |
US201414194830 |
申请日期 |
2014.03.03 |
| 申请人 |
Sumitomo Electronic Industries, Ltd. |
发明人 |
Mizuhara Naho;Uematsu Koji;Miyanaga Michimasa;Tanizaki Keisuke;Nakahata Hideaki;Nakahata Seiji;Okahisa Takuji |
| 分类号 |
H01L29/04;H01L29/20 |
主分类号 |
H01L29/04 |
| 代理机构 |
|
代理人 |
Judge James W. |
| 主权项 |
1. A Group-III nitride crystal composite, comprising:
a plurality of bulk III-nitride crystal slices, each with a major surface of crystallographic plane orientation being one selected from the group consisting of (1-102), (1-10-2), (11-22), (11-2-2), (20-21), (20-2-1), (22-41) and (22-4-1), disposed adjoining each other with the major-surface side of each facing up; and a III-nitride crystal epitaxially present on the major surfaces of the plurality of III-nitride crystal slices, said III-nitride crystal containing, as principal impurities, either silicon atoms or oxygen atoms. |
| 地址 |
Osaka JP |
