SATURATION VOLTAGE ESTIMATION METHOD AND MANUFACTURING METHOD OF SILICON EPITAXIAL WAFER

摘要

PROBLEM TO BE SOLVED: To provide a technique advantageous for fabricating with high production yield a semiconductor device from a silicon epitaxial wafer in which an epitaxial layer has a carbon concentration of 5×10atoms/cmor less.SOLUTION: Carbon contained in an epitaxial layer of a silicon epitaxial wafer is emission-activated, the emission-activated carbon is caused to emit light, and an emission intensity or an intensity ratio deriving from the carbon is determined. The relation between the intensity or the intensity ratio and a collector-emitter saturation voltage is checked in advance. A part of wafers are picked up from a production lot of the silicon epitaxial wafers, and the emission intensity or the intensity ratio of the wafers is determined. Referring the intensity or the intensity ratio to the aforementioned relation, it is determined whether the production lot is acceptable.