STORAGE DEVICE AND SEMICONDUCTOR DEVICE

摘要

A low-power storage device is provided. The storage device includes a first transistor, a second transistor, a logic element, and a semiconductor element. The second transistor controls supply of a first signal to a gate of the first transistor. When the potential of a second signal to be input is changed from a first potential into a second potential lower than the first potential, the logic element changes the potential of a first terminal of the first transistor from a third potential lower than the second potential into the first potential after the logic element changes the potential of the first terminal of the first transistor from the second potential into the third potential. The semiconductor element has a function of making a second terminal of the first transistor floating. The first transistor includes a channel formation region in an oxide semiconductor film.

主权项

1. A semiconductor device comprising:
a first transistor; and a logic element, wherein a first terminal of the first transistor is electrically connected to an output terminal of the logic element, wherein the logic element is configured to change a potential of the first terminal of the first transistor from a first potential into a second potential and then into a third potential when a first signal is input to an input terminal of the logic element, wherein the second potential is lower than the first potential, and wherein the third potential is higher than the first potential.