FINFET DEVICES CONTAINING MERGED EPITAXIAL FIN-CONTAINING CONTACT REGIONS

摘要

A plurality of semiconductor fins are formed which extend from a semiconductor material portion that is present atop an insulator layer of a semiconductor-on-insulator substrate. A gate structure and adjacent gate spacers are formed that straddle each semiconductor fin. Portions of each semiconductor fin are left exposed. The exposed portions of the semiconductor fins are then merged by forming an epitaxial semiconductor material from an exposed semiconductor material portion that is not covered by the gate structure and gate spacers.

主权项

1. A method of forming a semiconductor device comprising:
providing a structure comprising a topmost semiconductor layer located on a surface of an insulator layer; partially etching the topmost semiconductor layer to form a plurality of semiconductor fins extending upward from a topmost surface of a semiconductor material portion; forming a gate structure and adjacent gate spacers straddling each semiconductor fin, wherein bottommost horizontal surface portions of said gate structure and said gate spacers are in direct physical contact with said topmost surface of said semiconductor material portion; and epitaxially growing a semiconductor material from an exposed portion of said topmost surface of the semiconductor material portion which is located between each adjacent semiconductor fin, wherein said semiconductor material merges exposed portions of each adjacent semiconductor fin.