SEMICONDUCTOR DEVICE, ELECTRO-OPTICAL DEVICE, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, METHOD OF MANUFACTURING ELECTRO-OPTICAL DEVICE, AND ELECTRONIC APPARATUS

摘要

A lower insulation layer includes a concave portion that has a back surface on a first base member side, first to third surfaces which are opposed to the back surface, a fourth surface which is arranged between the first surface and the third surface, and a fifth surface which is arranged between the second surface and the third surface. A semiconductor layer is arranged on the first surface and the second surface. A gate electrode is arranged so as to be opposed to the semiconductor layer on at least the third surface, the fourth surface, and the fifth surface via a gate insulation layer.

主权项

1. A semiconductor device comprising:
a semiconductor layer which includes one of a source area and a drain area, the other of the source area and the drain area, and a channel area; a gate insulation layer which covers the channel area; a gate electrode which is disposed so as to be opposed to the channel area via the gate insulation layer; a first electrode which is one of a source electrode and a drain electrode; and a second electrode which is the other of the source electrode and the drain electrode, wherein the one of the source area and the drain area is disposed so as to cover a first surface of a first insulation layer, wherein the other of the source area and the drain area is disposed so as to cover a second surface of the first insulation layer, wherein the channel area is disposed so as to cover a third surface of the first insulation layer, wherein the first insulation layer includes a fourth surface between the first surface and the third surface, and a fifth surface between the second surface and the third surface, and wherein there is a gap between the first surface and the third surface.