发明名称 INTEGRATED CIRCUIT SYSTEM WITH NON-VOLATILE MEMORY AND METHOD OF MANUFACTURE THEREOF
摘要 <p>An integrated circuit system and a method for manufacturing the same are provided. The integrated circuit system comprises: an integrated circuit die which has an address switch; a lower electrode contact which has characteristics of a chemical vapor deposition or an atomic layer deposition, is coupled to the address switch, and is halogen-free; a transition material layer which is disposed just above the lower electrode contact; and an upper electrode contact which is disposed just above the transition material layer to form a non-volatile memory array on the integrated circuit die.</p>
申请公布号 KR20140123430(A) 申请公布日期 2014.10.22
申请号 KR20140042526 申请日期 2014.04.09
申请人 SONY CORPORATION 发明人 SILLS SCOTT;BALAKRISHNAN MURALIKRISHNAN;COOK BETH;RAMASWAMY DURAI VISHAK NIRMAL;YASUDA SHUICHIRO
分类号 H01L27/115;H01L21/205;H01L21/8247;H01L21/98 主分类号 H01L27/115
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