发明名称 |
INTEGRATED CIRCUIT SYSTEM WITH NON-VOLATILE MEMORY AND METHOD OF MANUFACTURE THEREOF |
摘要 |
<p>An integrated circuit system and a method for manufacturing the same are provided. The integrated circuit system comprises: an integrated circuit die which has an address switch; a lower electrode contact which has characteristics of a chemical vapor deposition or an atomic layer deposition, is coupled to the address switch, and is halogen-free; a transition material layer which is disposed just above the lower electrode contact; and an upper electrode contact which is disposed just above the transition material layer to form a non-volatile memory array on the integrated circuit die.</p> |
申请公布号 |
KR20140123430(A) |
申请公布日期 |
2014.10.22 |
申请号 |
KR20140042526 |
申请日期 |
2014.04.09 |
申请人 |
SONY CORPORATION |
发明人 |
SILLS SCOTT;BALAKRISHNAN MURALIKRISHNAN;COOK BETH;RAMASWAMY DURAI VISHAK NIRMAL;YASUDA SHUICHIRO |
分类号 |
H01L27/115;H01L21/205;H01L21/8247;H01L21/98 |
主分类号 |
H01L27/115 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|