| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor with a low-resistance semiconductor crystal formed on a nonpolar surface. <P>SOLUTION: The semiconductor includes a substrate 101, and p-type layers 108 and 109 laminated on a principal surface of the substrate 101, wherein the substrate principal surface is nonpolar, the p-type layers 108 and 109 are each formed of at least one of a group-III nitride semiconductor and a group-II oxide semiconductor, and each upper surface of the p-type layers 108 and 109 includes a facet plane having a plane direction different from that of the substrate principal surface. <P>COPYRIGHT: (C)2011,JPO&INPIT |
