| 摘要 |
The present invention is to disclose a wafer edge polishing apparatus and a polishing method of wafer edge. The polishing method of wafer edge of the disclosed present invention comprises: a step for rotating a wafer fixated on a chuck; a step for measuring a directional surface of the wafer using a wafer measuring part; a step for controlling the rotating speed of the wafer about the directional surface of the wafer; and a step for polishing an edge part of the wafer by enabling the edge part of the wafer to touch an edge grinding wheel. Therefore, the wafer edge polishing apparatus and the polishing method of wafer edge according to the present invention can precisely measure atom density and processability of the wafer by measuring the directional surface of the wafer with a crystal direction measurement device, and can gain uniform quality by controlling process time and speed considering the atom density and the processability of the wafer. |
