发明名称 |
Semiconductor devices |
摘要 |
Semiconductor devices include a substrate, a first gate structure and a second gate structure positioned on the substrate, and a first source/drain formed in the substrate respectively at two sides of the first gate structure and a second source/drain formed in the substrate respectively at two sides of the second gate structure. The first gate structure and the second gate structure include a same conductivity type. The first source/drain and the second source/drain are different. |
申请公布号 |
US8866230(B2) |
申请公布日期 |
2014.10.21 |
申请号 |
US201213456227 |
申请日期 |
2012.04.26 |
申请人 |
United Microelectronics Corp. |
发明人 |
Tung Yu-Cheng |
分类号 |
H01L27/088 |
主分类号 |
H01L27/088 |
代理机构 |
|
代理人 |
Hsu Winston;Margo Scott |
主权项 |
1. Semiconductor devices comprising:
a substrate; a first gate structure and a second gate structure positioned on the substrate, the first gate structure and the second gate structure comprising a same conductivity type; and a first source/drain formed in the substrate respectively at two sides of the first gate structure and a second source/drain formed in the substrate respectively at two sides of the second gate structure, the first source/drain and the second source/drain comprises a first epitaxial structure and the second source/drain comprises a second epitaxial structure, the first epitaxial structure comprises a diamond shape and the second epitaxial structure comprise a shape different from the diamond shape, wherein the first epitaxial structure comprises a first epitaxy concentration, the second epitaxial structure comprises a second epitaxy concentration, and the first epitaxy concentration is higher than the second epitaxy concentration; and an updoped epitaxial layer respectively formed on a top of the first epitaxial Structure and on a top of the second epitaxial structure. |
地址 |
Science-Based Industrial Park, Hsin-Chu TW |