Structures and methods of improving reliability of non-volatile memory devices

摘要

In one example, the memory device disclosed herein includes a gate insulation layer and a charge storage layer positioned above the gate insulation layer, wherein the charge storage layer has a first width. The device further includes a blocking insulation layer positioned above the charge storage layer and a gate electrode positioned above the blocking insulation layer, wherein the gate electrode has a second width that is greater than the first width. An illustrative method disclosed herein includes forming a gate stack for a memory device, wherein the gate stack includes a gate insulation layer, an initial charge storage layer, a blocking insulation layer and a gate electrode, and wherein the initial charge storage layer has a first width. The method further includes performing an etching process to selectively remove at least a portion of the initial charge storage layer so as to produce a charge storage layer having a second width that is less than the first width of the initial charge storage layer.

主权项

1. A memory device, comprising:
a gate insulation layer; a charge storage layer positioned above the gate insulation layer, said charge storage layer having a first width; a blocking insulation layer positioned above said charge storage layer; a gate electrode positioned above said blocking insulation layer, said gate electrode having a second width that is greater than said first width; and a sidewall spacer positioned adjacent to and laterally confining each of said gate insulation layer, said charge storage layer, said blocking insulation layer, and said gate electrode, wherein said sidewall spacer, said gate insulation layer, and said blocking insulation layer at least partially define a first gap that is positioned laterally adjacent to at least a first edge of said charge storage layer.