| 发明名称 | Planar cavity MEMS and related structures, methods of manufacture and design structures | ||
| 摘要 | A method of forming at least one Micro-Electro-Mechanical System (MEMS) includes forming a lower wiring layer on a substrate. The method further includes forming a plurality of discrete wires from the lower wiring layer. The method further includes forming an electrode beam over the plurality of discrete wires. The at least one of the forming of the electrode beam and the plurality of discrete wires are formed with a layout which minimizes hillocks and triple points in subsequent silicon deposition. | ||
| 申请公布号 | US8865497(B2) | 申请公布日期 | 2014.10.21 |
| 申请号 | US201012973422 | 申请日期 | 2010.12.20 |
| 申请人 | International Business Machines Corporation | 发明人 | Dunbar, III George A.;He Zhong-Xiang;Maling Jeffrey C.;Murphy William J.;Stamper Anthony K. |
| 分类号 | H01L29/84;B81C1/00;B81B3/00;G06F17/50;H01H57/00 | 主分类号 | H01L29/84 |
| 代理机构 | Roberts Mlotkowski Safran & Cole, P.C. | 代理人 | Canale Anthony;Roberts Mlotkowski Safran & Cole, P.C. |
| 主权项 | 1. A method of forming at least one Micro-Electro-Mechanical System (MEMS), comprising: forming a lower wiring layer on a substrate; forming a plurality of discrete wires from the lower wiring layer; and forming an electrode beam over the plurality of discrete wires, wherein at least one of the forming of the electrode beam and the plurality of discrete wires are formed with a slotted layout or a holed layout which minimizes hillocks and triple points in subsequent silicon deposition; and forming a cap at an end of the slotted layout or the holed layout. | ||
| 地址 | Armonk NY US | ||