METHOD FOR PURIFYING SILANE COMPOUND OR CHLOROSILANE COMPOUND, METHOD FOR PRODUCING POLYCRYSTALLINE SILICON, AND METHOD FOR REGENERATING WEAKLY BASIC ION-EXCHANGE RESIN

摘要

The invention provides a technique that makes it possible to use an ion-exchange resin stably over an extended period of time to remove boron impurities in a purification process for a silane compound or chlorosilane compound. In the invention, a weakly basic ion-exchange resin used in the purification of a silane compound or chlorosilane compound is to be washed by a gas containing hydrogen chloride. When used in the initial activation of the weakly basic ion-exchange resin, this washing makes it possible to obtain higher impurity adsorption capacity. The use of this washing to regenerate the weakly basic ion-exchange resin also makes it possible to use the ion-exchange resin stably over an extended period of time. This makes it possible to reduce resin usage in long-term operation and to reduce used resin disposal costs.