| 摘要 |
<p>A method for manufacturing a semiconductor device includes the steps of preparing a substrate made of silicon carbide and having an n type region (14, 17) formed to include a main surface, forming a p type region (15, 16) in a region including the main surface, forming an oxide film (20) on the main surface across the n type region (14, 17) and the p type region (15, 16), by heating the substrate having the p type region (15, 16) formed therein at a temperature of 1250°C or more, removing the oxide film (20) to expose at least a part of the main surface, and forming a Schottky electrode (50) in contact with the main surface that has been exposed by removing the oxide film (20).</p> |
