发明名称 |
PHOTOELECTRIC CONVERSION DEVICE AND METHOD FOR PRODUCING SAME |
摘要 |
<p>A photovoltaic device (10) is provided with: an n-type monocrystalline silicon substrate (21); an IN layer (25) layered over one surface of the n-type monocrystalline silicon substrate (21); an IP layer (26) layered over a region, of one surface of the IN layer 25, where the IN layer (25) is not layered, and layered so as to have an overlap region (26*) which is overlapped with the region where the IN layer (25) is layered; an n-side electrode (40) electrically connected to the IN layer (25) and formed over the overlap region (26*); and a p-side electrode (50) formed distanced from the n-side electrode (40) and electrically connected to the IP layer (26). In the IP layer (26), a separation gap (60) is formed between a region where the n-side electrode (40) is formed and a region where the p-side electrode (50) is formed.</p> |
申请公布号 |
EP2693488(A4) |
申请公布日期 |
2014.10.15 |
申请号 |
EP20120765597 |
申请日期 |
2012.02.29 |
申请人 |
SANYO ELECTRIC CO., LTD. |
发明人 |
GOTO, RYO;HASHIGUCHI, TAIKI;FUJITA, KAZUNORI;SHIGEMATSU, MASATO;KIRIHATA, YUTAKA;MISHIMA, TAKAHIRO |
分类号 |
H01L31/04;H01L31/0224;H01L31/0352;H01L31/068;H01L31/0745;H01L31/0747;H01L31/18 |
主分类号 |
H01L31/04 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|