| 摘要 |
A method of producing ²-SiAlON includes a sintering process, in which ²-SiAlON starting materials, a mixture of silicon nitride, aluminum nitride, , optically active element compound, and at least one compound selected from aluminum oxide and silicon oxide, are sintered at temperatures ranging from 1820°C to 2200°C. The method provides new ²-SiAlON low in carbon content and having high luminescence intensity by placing a plurality of boron nitride vessels in a graphite box to allow the ²-SiAlON starting materials packed in the plurality of boron nitride vessels to easily come in contact with nitrogen gas, and performing sintering in nitrogen atmosphere. |
