Gallium nitride devices with conductive regions

摘要

Semiconductor structures comprising a III-nitride (e.g., gallium nitride) material region and methods associated with such structures are provided. In some embodiments, the structures include an electrically conductive material (e.g., gold) separated from certain other region(s) of the structure (e.g., a silicon substrate) by a barrier material in order to limit, or prevent, undesirable reactions between the electrically conductive material and the other component(s) which can impair device performance. In certain embodiments, the electrically conductive material may be formed in a via. For example, the via can extend from a topside of the device to a backside so that the electrically conductive material connects a topside contact to a backside contact. The structures described herein may form the basis of a number of semiconductor devices including transistors (e.g., FET), Schottky diodes, light-emitting diodes and laser diodes, amongst others.

主权项

1. A method of forming a semiconductor structure comprising:
forming a gallium nitride layer on a substrate; forming a via that extends through at least a portion of said substrate; forming a barrier layer along sidewalls of said via; forming an electrically conductive layer on a back surface of said substrate; fabricating a semiconductor device, said semiconductor device having first and second power electrodes situated over said gallium nitride layer; said via coupling said electrically conductive layer on said back surface of said substrate to a topside contact formed over said substrate, said topside contact overlying a conductive field plate extending over one of said first and second power electrodes.