发明名称 |
Immunity of phase change material to disturb in the amorphous phase |
摘要 |
Disturb from the reset to the set state may be reduced by creating an amorphous phase that is substantially free of crystal nuclei when programming the reset state in a phase change memory. In some embodiments, this can be achieved by using a current or a voltage to program that exceeds the threshold voltage of the phase change memory element, but does not exceed a safe current voltage which would cause a disturb. |
申请公布号 |
US8861293(B2) |
申请公布日期 |
2014.10.14 |
申请号 |
US201314102820 |
申请日期 |
2013.12.11 |
申请人 |
Ovonyx, Inc. |
发明人 |
Gordon George A.;Savransky Semyon D.;Parkinson Ward D.;Kostylev Sergey;Reed James;Lowrey Tyler A.;Karpov Ilya V.;Spadini Gianpaolo |
分类号 |
G11C29/00;G11C29/04;G11C11/56;G11C13/00;G11C8/10;G11C16/34 |
主分类号 |
G11C29/00 |
代理机构 |
Trop, Pruner & Hu, P.C. |
代理人 |
Trop, Pruner & Hu, P.C. |
主权项 |
1. A method comprising:
upon determining that data stored in a phase change memory array is in the wrong state, avoiding correcting the data in the array; and correcting the data outside of the array. |
地址 |
Sterling Heights MI US |