Glass wafers for semiconductor fabrication processes and methods of making same

摘要

The present disclosure is directed to the use of glass wafers as carriers, interposers, or in other selected applications in which electronic circuitry or operative elements, such as transistors, are formed in the creation of electronic devices. The glass wafers generally include a glass having a coefficient of thermal expansion equal to or substantially equal to a coefficient of thermal expansion of semiconductor silicon, an indexing feature, and a coating on at least a portion of one face of the glass.

主权项

1. A glass wafer for use in semiconductor fabrication equipment to produce electronic circuit elements, the glass wafer comprising:
a glass having a coefficient of thermal expansion from about 2×10−6/° C. to about 9×10−6/° C.; an indexing feature configured to be recognized by the semiconductor fabrication equipment; and a coating on at least a portion of one face of the glass, wherein the coating extends inward from an outer edge of the glass, wherein the coating changes an optical characteristic of at least a portion of the one face of the glass or changes a dielectric property of the glass, and wherein the coating is an organic polymer, a black permanent marker ink, a heat treated thin organic layer, a carbon-filled photoresist material, a darkened (cured) spin-on photoresist, a carbon-filled spin-on-glass material, an inkjetted carbon based ink, silicon nanoparticles, a sintered black screen-printed glass frit material, or a photoluminescent material.