Semiconductor structure having aluminum layer with high reflectivity

摘要

A method for filling a trench with a metal layer is disclosed. A deposition apparatus having a plurality of supporting pins is provided. A substrate and a dielectric layer disposed thereon are provided. The dielectric layer has a trench. A first deposition process is performed immediately after the substrate is placed on the supporting pins to form a metal layer in the trench, wherein during the first deposition process a temperature of the substrate is gradually increased to reach a predetermined temperature. When the temperature of the substrate reaches the predetermined temperature, a second deposition process is performed to completely fill the trench with the metal layer. The present invention further provides a semiconductor device having an aluminum layer with a reflectivity greater than 1, wherein the semiconductor device is formed by using the method.

主权项

1. A semiconductor device, comprising:
a substrate; a dielectric layer disposed on the substrate, wherein the dielectric layer has a trench; and an aluminum layer completely filled into the trench, wherein a reflectivity of the aluminum layer is substantially greater than 1.