Method for manufacturing array substrate with embedded photovoltaic cell

摘要

A method for manufacturing array substrate with embedded photovoltaic cell includes: providing a substrate; forming a buffer layer on the substrate; forming an amorphous silicon layer on the buffer layer; converting the amorphous silicon layer into a polysilicon layer; forming a pattern on the polysilicon layer; forming a first photoresist pattern on the polysilicon layer and injecting N+ ions; forming a gate insulation layer on the polysilicon layer; forming a second photoresist pattern on the gate insulation layer and injecting N− ions; forming a third photoresist pattern on the gate insulation layer and injecting P+ ions; forming a metal layer on the gate insulation layer so as to form a gate terminal; forming a hydrogenated insulation layer on the metal layer; forming a first ditch in the first insulation layer; and forming a second metal layer on the first insulation layer.

主权项

1. A method for manufacturing array substrate with embedded photovoltaic cell, comprising the following steps:
(1) providing a substrate; (2) forming a buffer layer on the substrate; (3) forming an amorphous silicon layer on the buffer layer; (4) carrying out laser annealing to convert the amorphous silicon layer into a polysilicon layer; (5) applying a masking operation to form a predetermined pattern, which includes a first polysilicon section and a second polysilicon section, on the polysilicon layer; (6) forming a first photoresist pattern on the polysilicon layer and injecting N+ ions into the first photoresist pattern so as to form first, second, and third N+ ion sections where the first and second N+ ion sections are respectively located at opposite sides of the first polysilicon section and the third N+ ion section is located at the side of the second polysilicon section that is close to the first polysilicon section; (7) forming a gate insulation layer on the polysilicon layer; (8) forming a second photoresist pattern on the gate insulation layer and injecting N− ions into the second photoresist pattern so as to form first and second N− ion sections on the sides of the first and second N+ ion sections that are close to the first polysilicon section and not to form an N− ion section between the second polysilicon section and the third N+ ion section; (9) forming a third photoresist pattern on the gate insulation layer and injecting and activating P+ ions into the third photoresist pattern; (10) forming a first metal layer on the gate insulation layer and applying a masking operation to form a gate terminal; (11) forming a first insulation layer on the first metal layer and hydrogenating the first insulation layer to form a hydrogenated insulation layer; (12) applying a masking operation to form a first ditch in the first insulation layer; and (13) forming a second metal layer on the first insulation layer and applying a masking operation to form metal electrodes so as to complete a thin-film transistor with the first of silicon section the first and second N+ ion sections and the first and second N− ion sections and to simultaneously complete a photovoltaic cell with the second polysilicon section and the third N+ ion section.