发明名称 |
Power switch driving circuits and switching mode power supply circuits thereof |
摘要 |
In one embodiment, a power switch driving circuit can include: (i) a first circuit configured receiving a control signal, and controlling a first transistor gate, where a first transistor source is coupled to a power supply, and a first transistor drain is coupled to a driving signal configured to control a power switch; (ii) a second circuit configured to receive the control signal, and to control a second transistor gate, where a second transistor source is coupled to ground, and a second transistor drain is coupled to the driving signal; and (iii) a driving enhancement circuit having a third transistor and a first inverter that is configured to invert an output of the first circuit to control a third transistor gate, where a third transistor source is coupled to the driving signal, and a third transistor drain is coupled to the power supply. |
申请公布号 |
US8860472(B2) |
申请公布日期 |
2014.10.14 |
申请号 |
US201313868830 |
申请日期 |
2013.04.23 |
申请人 |
Silergy Semiconductor Technology (Hangzhou) Ltd |
发明人 |
Yuan Xiaolong |
分类号 |
H03K3/00;H03K17/06 |
主分类号 |
H03K3/00 |
代理机构 |
|
代理人 |
Stephens, Jr. Michael C. |
主权项 |
1. A power switch driving circuit, comprising:
a) a first circuit configured to receive a control signal, and to control a gate of a first transistor, wherein a source of said first transistor is coupled to an input power supply, and a drain of said first transistor is coupled to a driving signal that is configured to control a power switch based on said control signal, said first circuit comprising a first level shifter configured to receive said control signal and a first inverter configured to invert an output from said first level shifter, to provide said control for said gate of said first transistor; b) a second circuit configured to receive said control signal, and to control a gate of a second transistor to execute an opposite switching action from that of said first transistor, wherein a source of said second transistor is coupled to ground, and a drain of said second transistor is coupled to said driving signal; and c) a driving enhancement circuit having a third transistor and a second inverter, wherein said second inverter is configured to invert an output of said first circuit to control a gate of said third transistor, wherein a source of said third transistor is coupled to said driving signal, and a drain of said third transistor is coupled to said input power supply. |
地址 |
Hangzhou CN |