Method of manufacturing complimentary metal-insulator-metal (MIM) capacitors

摘要

A low capacitance density, high voltage MIM capacitor and the high density MIM capacitor and a method of manufacture are provided. The method includes depositing a plurality of plates and a plurality of dielectric layers interleaved with one another. The method further includes etching a portion of an uppermost plate of the plurality of plates while protecting other portions of the uppermost plate. The protected other portions of the uppermost plate forms a top plate of a first metal-insulator-metal (MIM) capacitor and the etching exposes a top plate of a second MIM capacitor.

主权项

1. A method comprising:
forming a plurality of plates and a plurality of dielectric layers interleaved with one another, wherein the forming the plurality of plates and the plurality of dielectric layers comprises at least:
forming a first metal plate;forming a high-k dielectric layer on the first metal plate;forming a second metal plate on the high-k dielectric layer;forming a low-k dielectric layer on the second metal plate; andforming an upper metal plate on the low-k dielectric layer; patterning the upper metal plate by removing portions thereof; patterning portions of the low-k dielectric layer and the second metal plate; patterning portions of the high-k dielectric layer and first metal plate; etching a portion of an uppermost plate of the plurality of plates while protecting other portions of the uppermost plate, wherein the protected other portions of the uppermost plate forms a top plate of a first metal-insulator-metal (MIM) capacitor and the etching exposes a top plate of a second MIM capacitor, wherein:
the first metal plate forms a bottom metal plate of the first MIM capacitor and the second MIM capacitor, simultaneously;the second metal plate forms a floating middle metal plate of the first MIM capacitor and the top plate of the second MIM capacitor, simultaneously; andthe third metal plate is the uppermost plate that forms the top plate of the first MIM capacitor.