Selective Chemical Etching Process

摘要

The present invention relates to a process for selective wet chemical etching of a thin-film substrate comprising a CIGS surface layer. The present invention also relates to a process for producing cells in series for thin-film photovoltaic modules, which process implements the selective wet chemical etching process according to the invention. The present invention furthermore relates to a process for creating small patterns, such as for example monolithic interconnects, in thin-film photovoltaic devices, which process implements the selective wet chemical etching process according to the invention.

主权项

1. A process for the selective wet chemical etching of a thin-film substrate comprising at least one CIGS surface layer to be etched, and an underlying metal layer comprising molybdenum deposited on a support, characterized in that it comprises the following steps:
a) submerging the substrate to be etched in a solution comprising:
at least one precursor of Br2 or Cl2,at least one organic monoacid, andat least one compound of formula MX wherein
M represents an alkali metal chosen from sodium and potassium;X represents a halogen atom chosen from chlorine and bromine; b) subjecting the substrate submerged in the solution used in step a), to a heat treatment that enables the selective reaction of Br2 or Cl2 with the aforementioned surface layer.