CHEMICAL LINKERS TO IMPART IMPROVED MECHANICAL STRENGTH TO FLOWABLE FILMS

摘要

Methods forming a low-κ dielectric material on a substrate are described. The methods may include the steps of producing a radical precursor by flowing an unexcited precursor into a remote plasma region, and reacting the radical precursor with a gas-phase silicon precursor to deposit a flowable film on the substrate. The gas-phase silicon precursor may include at least one silicon-and-oxygen containing compound and at least one silicon-and-carbon linker. The flowable film may be cured to form the low-κ dielectric material.

主权项

1. A method of forming a low-κ dielectric material on a substrate, the method comprising:
producing a radical precursor by flowing an unexcited precursor into a remote plasma region; reacting the radical precursor with a gas-phase silicon precursor and depositing a flowable film on the substrate, wherein the gas-phase silicon precursor comprises at least one silicon-and-oxygen containing compound and at least one silicon-and-carbon linker; and curing the flowable film to form the low-κ dielectric material.