发明名称 METHOD FOR MANUFACTURING CI(G)S THIN FILM BY USING HIGH-PRESSURE SELENIZATION STEP AND SOLAR CELL USING SAME
摘要 <p>Disclosed is a method for increasing the efficiency of a selenization step in a process for manufacturing CI(G)S used in a solar cell, and more particularly, to enabling high-pressure selenization through the selenization step by inserting a CI(G)S-based precursor thin film into a specific container or a chamber, injecting selenium (Se) into the container or the chamber, and increasing the temperature. The present invention provides the advantages of reducing loss of selenium (Se) during the high-pressure selenization by increasing partial selenium (Se) pressure in the specific container or the chamber, increasing selenization efficiency, and reducing heat treatment time. To this end, the distance between the CI(G)S-based precursor thin film and the chamber is between 6 to 20mm, wherein selenium (Se) is injected into the chamber, and the temperature is increased by means of a heat-emitting body positioned on one side or a front side on the inside of the chamber for the heat treatment for selenization.</p>
申请公布号 WO2014163367(A1) 申请公布日期 2014.10.09
申请号 WO2014KR02767 申请日期 2014.04.01
申请人 KOREA INSTITUTE OF ENERGY RESEARCH 发明人 EO, YOUNG JOO;CHO, JUN SIK;PARK, JOO HYUNG;YOON, KYUNG HOON;AHN, SEJIN;GWAK, JIHYE;YUN, JAE HO;CHO, ARA;SHIN, KEE SHIK;AHN, SEOUNGKYU;YOU, JIN SU;PARK, SANG HYUN
分类号 H01L31/0749;H01L31/042;H01L31/18 主分类号 H01L31/0749
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