| 摘要 |
PROBLEM TO BE SOLVED: To provide a nonvolatile memory cell that can perform store operation and recall operation between a volatile storage unit and a nonvolatile storage unit without adversely affecting an SNM (Static Noise Margin) and using a transistor.SOLUTION: A nonvolatile storage unit 20 comprises: a nonvolatile memory element 21 that is inserted between a node V1 of a volatile unit 10 and a source line SL; and a nonvolatile memory element 22 that is inserted between a node V2 of the volatile memory unit 10 and the source line SL. Each nonvolatile memory element is formed by connecting two diodes connected in antiparallel to each other with a resistance change type element in series. At the time of store operation, voltages that are differences between voltages of the nodes V1 and V2 of the volatile memory unit 10 and a voltage of the source line SL are applied to resistance change type elements R1 and R2, respectively. At the time of recall operation, a power supply voltage to a flip-flop of the volatile storage unit 10 is raised. |
