发明名称 |
METHODS OF FORMING A FIELD EFFECT TRANSISTOR, INCLUDING FORMING A REGION PROVIDING ENHANCED OXIDATION |
摘要 |
Methods of forming a Field Effect Transistor (FET) are provided. The methods may include forming a region that provides enhanced oxidation under a fin-shaped FET (FinFET) body. |
申请公布号 |
US2014302645(A1) |
申请公布日期 |
2014.10.09 |
申请号 |
US201313859482 |
申请日期 |
2013.04.09 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
Rodder Mark S.;Seo Kang-ill |
分类号 |
H01L21/762;H01L29/66 |
主分类号 |
H01L21/762 |
代理机构 |
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代理人 |
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主权项 |
1. A method of forming a Field Effect Transistor (FET), comprising:
implanting ions into a substrate comprising a fin-shaped FET (FinFET) body protruding from the substrate, such that the FinFET body overlaps a portion of an implanted region of the ions; recessing the substrate to remove portions of the implanted region exposed by the FinFET body and such that the FinFET body overlaps a remaining portion of the implanted region; forming an isolation layer on the substrate and on sidewalls of the remaining portion of the implanted region; and oxidizing the remaining portion of the implanted region. |
地址 |
Suwon-si KR |