| 摘要 |
<p>An objective of the present invention is to form a film using aluminum oxide at a high film forming rate through a sputtering process while stabilizing an oxidation limit. In order to accomplish the objective of the present invention, the method for forming the aluminum oxide film includes: a first plasma generation step of generating plasma in a vacuum vessel having sputter gas and reactive gas; a second plasma generation step of generating magnetron plasma through a static magnetic field by applying sputter voltage to an aluminum target; and controlling an amount of reactive gas introduced into the vacuum vessel. Further, in the second plasma generation step, the sputter voltage is constantly controlled. In the control step, the amount of the introduced reactive gas is controlled during the second plasma generation step so that the value of the sputter current becomes a target current value. The first plasma generation step is a step to generate high-frequency induction coupling plasma at least during the second plasma generation step using a high frequency antenna including a conductor having a winding number of less than one revolution.</p> |
