| 摘要 |
An objective of the present invention is to reduce contamination of particles of a semiconductor wafer (W) which is a substrate. A film forming apparatus, for sequentially supplying multiple types of reaction gases reacting with each other to a wafer (W) in a processing container (1) in a vacuum atmosphere and forming a film, forms a thin film and then purges particles attached to a portion of the processing container (1) contacting a reaction gas through flow of a purge gas. The pressure of the purge gas is increased to a pressure which is higher than a pressure created while the pressure of the reaction gas is increased by using a pressure raising reservoir tank (61, 62) for raising the pressure of the reaction gas and then discharging the reaction gas into the processing container (1), and then the purge gas is supplied to the processing container (1). Accordingly, particles existing in a fluid passage on a downstream side of the reservoir tank (61, 62) flow together with the purge gas to be removed by a strong flow of the purge gas. Therefore, because the particles introduced into the processing container (1) are reduced, contamination of particles of the wafer (W) can be reduced. |
