| 发明名称 |
Epitaxial process |
| 摘要 |
An epitaxial process includes the following step. A recess is formed in a substrate. A seeding layer is formed to cover a surface of the recess. A buffer layer is formed on the seeding layer. An etching process is performed on the buffer layer to homogenize and shape the buffer layer. An epitaxial layer is formed on the homogenized flat bottom shape buffer layer. |
| 申请公布号 |
US8853060(B1) |
申请公布日期 |
2014.10.07 |
| 申请号 |
US201313902862 |
申请日期 |
2013.05.27 |
| 申请人 |
United Microelectronics Corp. |
发明人 |
Lai Szu-Hao;Wu Chun-Yuan;Chien Chin-Cheng;Yu Tien-Wei;Chang Ming-Hua;Lin Yu-Shu;Wen Tsai-Yu;Hsu Hsin-Kuo |
| 分类号 |
H01L21/20;H01L21/02 |
主分类号 |
H01L21/20 |
| 代理机构 |
|
代理人 |
Hsu Winston;Margo Scott |
| 主权项 |
1. An epitaxial process, comprising:
forming a recess in a substrate; forming a seeding layer to cover a surface of the recess; forming a buffer layer on the seeding layer; performing an etching process on the buffer layer to homogenize and shape the buffer layer; and forming an epitaxial layer on the buffer layer. |
| 地址 |
Science-Based Industrial Park, Hsin-Chu TW |
