Semiconductor constructions, memory cells, memory arrays and methods of forming memory cells

摘要

Some embodiments include a construction having oxygen-sensitive structures directly over spaced-apart nodes. Each oxygen-sensitive structure includes an angled plate having a horizontal portion along a top surface of a node and a non-horizontal portion extending upwardly from the horizontal portion. Each angled plate has an interior sidewall where an inside corner is formed between the non-horizontal portion and the horizontal portion, an exterior sidewall in opposing relation to the interior sidewall, and lateral edges. Bitlines are over the oxygen-sensitive structures, and have sidewalls extending upwardly from the lateral edges of the oxygen-sensitive structures. A non-oxygen-containing structure is along the interior sidewalls, along the exterior sidewalls, along the lateral edges, over the bitlines, and along the sidewalls of the bitlines. Some embodiments include memory arrays, and methods of forming memory cells.

主权项

1. A method of forming memory cells, comprising:
forming a pair of spaced-apart electrical nodes supported by a semiconductor substrate; the nodes being a first node and a second node; forming a patterning structure over the nodes, the patterning structure spanning the space between the nodes and having a first sidewall in opposing relation to a second sidewall; the first sidewall being directly over the first node and the second sidewall being directly over the second node; the patterning structure comprising a first non-oxygen-containing material; forming oxygen-sensitive material along an exterior surface of the patterning structure; the oxygen-sensitive material being configured as a bridge extending from an upper surface of the first node to an upper surface of the second node; said bridge having a first segment along the first sidewall, a second segment along the second sidewall, and a third segment across a top of the patterning structure; forming second non-oxygen-containing material along the first, second and third segments of the oxygen-sensitive material bridge; removing at least some of the third segment of the oxygen-sensitive material bridge to separate the first segment from the second segment; incorporating the first segment and first node into a first memory cell; and incorporating the second segment and second node into a second memory cell which is adjacent to the first memory cell.