| 主权项 |
1. A method of manufacturing a semiconductor device by performing predetermined processes on a substrate to form a pattern including line portions and space portions and having a space ratio of 1:1 between a width of a first space portion and a width of a second space portion that is adjacent to the first space portion on a film to be processed on the substrate,
wherein the predetermined processes include: forming a resist pattern formed as a plurality of lines on the film to be processed on the substrate, by performing a photolithography process on the substrate; trimming the resist pattern; forming a sacrificial film that is a mask used when etching the film to be processed on the resist pattern; forming process of forming a pattern of the sacrificial film on the film to be processed on the substrate, wherein the pattern comprises a plurality of lines, by etching the sacrificial film so as to have the sacrificial film remain only on side wall portions of line portions of the resist pattern, and by removing the resist pattern; forming a pattern of the film to be processed including a plurality of lines on the film to be processed, by etching the film to be processed by using the sacrificial film pattern as a mask; forming a first monitor pattern which is formed on a sacrificial film of a substrate for inspection in the forming of the sacrificial film pattern and forming a second monitor pattern which is formed on a film to be processed on the substrate for inspection in the forming of the film to be processed pattern by performing predetermined processes on the substrate for inspection, wherein target space ratios of the first and second monitor patterns are different from a ratio of 1:1; measuring sizes of the first monitor pattern or the second monitor pattern, in a scatterometry method by using a library including sacrificial film patterns or patterns of the film to be processed, wherein a range of space ratios of the library includes the target space ratio and does not include the space ratio of 1:1; converting the sizes of the first or second monitor pattern, which are measured through the measuring of sizes of the first or second monitor pattern, into sizes of a sacrificial film pattern or a pattern of a film to be processed, a space ratio of which is aimed to be 1:1, by using a regression equation for converting the sizes of the first monitor pattern or the second monitor pattern having the target space ratio into sizes of a sacrificial film pattern or a pattern of a film to be processed having a space ratio of 1:1; compensating for processing conditions in the predetermined processes, based on the sizes of the sacrificial film pattern or the pattern of the film to be processed converted in the converting of the sizes of the first or second monitor pattern; and forming a pattern having a space ratio of 1:1 on the film to be processed on the substrate, by performing the predetermined processes on the substrate under the compensated processing conditions. |
