| 摘要 |
<p>According to the present invention, a single crystal is formed on a substrate surface in the heat treatment for heating a target substrate by introducing a microwave into a processing vessel. For a wafer (W) irradiated with the microwave and an amorphous silicon formed on the wafer (W), the amorphous silicon is single crystallized on the interface of the wafer (W) and the amorphous silicon. The regions other than the interface are heated at a first temperature, which does not cause nucleation, for a predetermined period, and is heated at a second temperature higher than the first temperature.</p> |
