SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE MANUFACTURING METHOD

摘要

PROBLEM TO BE SOLVED: To reduce resistance between a second conductivity type well formed below a first conductivity type well in a substrate and a second conductivity type well formed in a horizontal direction of the first conductivity type well.SOLUTION: A semiconductor device comprises: a substrate; a first conductivity type well formed in the substrate; and a second conductivity type second well which has a first region formed in the substrate in a horizontal direction of the first conductivity type well and to a first depth from a surface of the substrate, and a second region which is formed at a depth deeper than the first depth from the surface of the substrate and connected to the first well.