| 摘要 |
A semiconductor memory device includes a bit line, an active region formed in a semiconductor substrate, a plug formed on the active region and connecting the bit line to the active region, a memory cell which includes a first gate insulating film on the active region, a charge storage layer on the first gate insulating film, a first insulating film on the charge storage layer, and a control gate electrode on the first insulating film, a select transistor formed between the plug and the memory cell on the active region and including a second gate insulating film on the active region, a first electrode layer on the second gate insulating film, a second insulating film on the first electrode layer, and a second electrode layer on the second insulating film, and a wiring formed above the active region between the plug and the second electrode layer of the select transistor. |
| 主权项 |
1. A semiconductor memory device comprising:
a bit line; an active region formed in a semiconductor substrate; a plug formed on the active region and connecting the bit line to the active region; a memory cell which includes a first gate insulating film on the active region, a charge storage layer on the first gate insulating film, a first insulating film on the charge storage layer, and a control gate electrode on the first insulating film; a select transistor formed between the plug and the memory cell on the active region and including a second gate insulating film on the active region, a first electrode layer on the second gate insulating film, a second insulating film on the first electrode layer, and a second electrode layer on the second insulating film; and a wiring formed above the active region between the plug and the second electrode layer of the select transistor. |
