| 摘要 |
PROBLEM TO BE SOLVED: To provide an ingot in which generation of a crack is suppressed, and a manufacturing method of a silicon carbide substrate obtained by cutting the ingot, and the ingot which can suppresses generation of the crack.SOLUTION: An ingot 1 includes a seed substrate 11 consisting of silicon carbide, and a silicon carbide layer 13 growing on the seed substrate 11. The silicon carbide layer 13 has a thickness of 15 mm or more in a growth direction. When a lattice constant is measured at multiple measurement points, S1, S2, and S3, which exist along the growth direction in the silicon carbide layer 13, and are 5 mm apart between adjacent points, a difference between a maximum value of the lattice constant and a minimum value of the lattice constant is 0.004 nm or less. |
