发明名称 |
Semiconductor power module and method for manufacturing the same |
摘要 |
A one power semiconductor module, with the first housing part forming structure unit and the direct current voltage of a connecting device, the first housing part having a recess, a direct current voltage connecting device has a first and a second direct current voltage a connecting element, the first direct current voltage connecting element is provided with a first punch segment in a recess, second direct current voltage connecting element is provided with a second punch the recess in a, construction there is a gap between the first and second punch segments, first and second through section to the elastomer, elastomer fill gap, elastic body and first and second section material through a locking manner so that the first and second punch segment relative to the first housing part seal. A direct current loading connecting element reliably and has a high temperature change tolerance relative to the housing to seal a power semiconductor module, a direct current voltage a connecting element between a pitch can be small floor. |
申请公布号 |
EP2784809(A2) |
申请公布日期 |
2014.10.01 |
申请号 |
EP20140154238 |
申请日期 |
2014.02.07 |
申请人 |
SEMIKRON ELEKTRONIK GMBH & CO. KG |
发明人 |
BOGEN, INGO;GROSSMANN, JÖRN;GÖBL, CHRISTIAN;WALTER, CHRISTIAN;GRASCHL, PATRICK |
分类号 |
H01L23/29;H01L21/50;H01L23/04 |
主分类号 |
H01L23/29 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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