发明名称 |
Semiconductor device and method for manufacturing the same |
摘要 |
<p>A semiconductor device in which a lateral bipolar transistor and a CMOS transistor are hybrid-integrated, and the lateral bipolar transistor includes an open region opened in a device isolating oxide film surrounding an active region; a polysilicon film formed on the open region; and a protective film covering at least a part of a peripheral surface of the active region exposed by opening the open region in the device isolating oxide film, wherein the polysilicon film has such a thickness as to expose the active region out of the polysilicon film, and the protective film is a film for preventing the active region from being etched when the polysilicon film is etched to the thickness.</p> |
申请公布号 |
EP2784823(A2) |
申请公布日期 |
2014.10.01 |
申请号 |
EP20140168446 |
申请日期 |
2008.12.19 |
申请人 |
ASAHI KASEI EMD CORPORATION |
发明人 |
KORICIC, MARKO;SULIGOJ, TOMISLAV;MOCHIZUKI, HIDENORI;MORITA, SOICHI |
分类号 |
H01L29/735;H01L21/331;H01L21/8222;H01L21/8248;H01L21/8249;H01L27/06;H01L29/08;H01L29/10 |
主分类号 |
H01L29/735 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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