Method for equipping an epitaxy reactor

摘要

The invention relates to a method for equipping a process chamber in an apparatus for depositing at least one layer on a substrate held by a susceptor in the process chamber, process gases being introduced into the process chamber through a gas inlet element, in particular by means of a carrier gas, the process gases decomposing into decomposition products in the chamber, in particular on hot surfaces, the decomposition products comprising the components that form the layer. In order to improve the apparatus so that thick multi-layer structures can be deposited reproducibly in process steps that follow one another directly, it is proposed that a material is selected for the surface facing the process chamber at least of the wall of the process chamber that is opposite the susceptor, the optical reflectivity, optical absorptivity and optical transmissivity of which respectively correspond to those of the layer to be deposited during the layer growth.

主权项

1. A method for equipping a process chamber in an apparatus for depositing at least one III-V semiconductor layer on a substrate held by a susceptor in the process chamber, process gases being introduced into the process chamber through a gas inlet element, in particular by means of a carrier gas, the process gases containing at least one organometallic compound of the Main Group III and a hydride of the Main Group V and decomposing into decomposition products in the process chamber, in particular on hot surfaces therein, the decomposition products comprising components that form the III-V semiconductor layer, the method characterized by selecting a material for a surface facing at least a wall of the process chamber that is opposite the susceptor, according to an optical reflectivity, optical absorptivity and optical transmissivity of said material, which reflectivity, absorptivity and transmissivity are the same as those of the layer to be deposited, and further selecting the material for the surface to be of a different material than the layer to be deposited.