Wafer dicing using hybrid multi-step laser scribing process with plasma etch

摘要

Methods of dicing semiconductor wafers, each wafer having a plurality of integrated circuits, are described. A method includes forming a mask above the semiconductor wafer. The mask is composed of a layer covering and protecting the integrated circuits. The mask is patterned with a multi-step laser scribing process to provide a patterned mask with gaps. The patterning exposes regions of the semiconductor wafer between the integrated circuits. The semiconductor wafer is then etched through the gaps in the patterned mask to singulate the integrated circuits.

主权项

1. A method of dicing a semiconductor wafer comprising a plurality of integrated circuits, the method comprising:
forming a mask above the semiconductor wafer, the mask comprising a layer covering and protecting the integrated circuits; patterning the mask and a portion of the semiconductor wafer with a multi-step laser scribing process to provide a patterned mask and trenches in the semiconductor wafer between the integrated circuits, the multi-step laser scribing process comprising:
scribing with two or more offset but overlapping Gaussian beam passes; and, subsequently,scribing with a top hat beam pass overlapping the Gaussian beam passes; and plasma etching the semiconductor wafer to extend the trenches and to singulate the integrated circuits.