Method of manufacturing semiconductor device, substrate processing method, substrate processing apparatus and recording medium

摘要

A method of manufacturing a semiconductor device includes: accommodating a substrate in a processing chamber; and supplying an organosilicon-based gas into the processing chamber that is heated to form a film including silicon and carbon on the substrate. In the forming of the film including silicon and carbon, a cycle is performed a predetermined number of times. The cycle includes supplying the organosilicon-based gas into the processing chamber and confining the organosilicon-based gas in the processing chamber, maintaining a state in which the organosilicon-based gas is confined in the processing chamber, and exhausting an inside of the processing chamber.

主权项

1. A method of manufacturing a semiconductor device comprising:
accommodating a substrate in a processing chamber; and supplying an organosilicon-based gas into the processing chamber, which is heated, to form a film including silicon and carbon on the substrate, wherein in the forming of the film including silicon and carbon, a cycle is performed a predetermined number of times, the cycle including alternately performing the following (a) and (b):
(a) alternately performing a predetermined number of times:
(a-1) supplying the organosilicon-based gas into the processing chamber and confining the organosilicon-based gas in the processing chamber, and(a-2) maintaining a state in which the organosilicon-based gas is confined in the processing chamber, and(b) exhausting an inside of the processing chamber.