| 发明名称 |
Multilayer construction |
| 摘要 |
A multilayer construction is disclosed. The multilayer construction includes a -II-VI semiconductor layer (110)x and a Si3N4 layer (120) disposed directly on the II-VI semiconductor layer. To improve the adhesion of the Si3N4 layer (120) a native oxide on the II-VI semiconductor layer is removed. |
| 申请公布号 |
US8846518(B2) |
申请公布日期 |
2014.09.30 |
| 申请号 |
US201113805825 |
申请日期 |
2011.06.01 |
| 申请人 |
3M Innovative Properties Company |
发明人 |
Zhang Jun-Ying;Haase Michael A.;Ballen Todd A.;Smith Terry L. |
| 分类号 |
H01L21/3205;H01L21/311;C23C16/34;H01L21/306;H01L33/46;C23C16/02;B82Y20/00;C23C14/02;H01L21/46;C23C14/06;H01S5/347;G02B6/44;H01S5/183;H01L33/28 |
主分类号 |
H01L21/3205 |
| 代理机构 |
|
代理人 |
Dong Yufeng;Iden Daniel J.;Storvick Kristofor L. |
| 主权项 |
1. A method of fabricating a multilayer construction comprising the steps of:
(a) providing a II-VI semiconductor layer grown on a first substrate, the II-VI semiconductor layer comprising a native oxide layer at a first major surface of the II-VI semiconductor layer; (b) removing the native oxide layer; (c) depositing an Si3N4 layer directly on the first major surface of the II-VI semiconductor layer; (d) depositing an oxide layer directly on the Si3N4 layer; (e) disposing an adhesive layer directly on the oxide layer; and (g) adhering a second substrate to the oxide layer using the adhesive layer. |
| 地址 |
St. Paul MN US |
